PSMN4R0-30YL,115

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

41 mJ

Gate To Source Voltage Vgs

20V

Power Dissipation

69W

Vgsth Max Id

2.15V @ 1mA

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

44 ns

Continuous Drain Current Id

100A

Yayın Yılı

2014

Pulsed Drain Currentmax Idm

396A

Input Capacitance Ciss Max Vds

2090pF @ 12V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Drain To Source Breakdown Voltage

30V

Kılıf / Paket

SC-100, SOT-669

Number Of Elements

1

Power Dissipation Max

69W Tc

Vgs Max

±20V

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

36.6nC @ 10V

Rise Time

51ns

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Sayısı

4

Drain Currentmax Abs Id

99A

Radyasyon Dayanımı

No

Fall Time Typ

18 ns

Pin Sayısı

5

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Contact Plating

Tin

Fet Type

N-Channel

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

4m Ω @ 15A, 10V