Adet bazlı fiyat
- 1+ adet$6.86
- 10+ adet$6.47
- 100+ adet$6.10
- 500+ adet$5.76
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Number Of Channels
- 1
- Ambalaj
- Tube
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 45 ns
- RoHS Durumu
- ROHS3 Compliant
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 62.7 ns
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Drive Voltage Max Rds On Min Rds On
- 10V
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 130A Tc
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 705A
- Input Capacitance Ciss Max Vds
- 5600pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 130A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 3.9m Ω @ 25A, 10V
- Yayın Yılı
- 2013
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Rise Time
- 41.4ns
- Pin Sayısı
- 3
- Weight
- 6.000006g
- Gate Charge Qg Max Vgs
- 103nC @ 10V
- Kılıf / Paket
- TO-220-3
- Vgs Max
- ±20V
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 263W Tc
- Turn On Delay Time
- 25.3 ns
- Drain To Source Breakdown Voltage
- 60V
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