Adet bazlı fiyat
- 1+ adet$1.55
- 10+ adet$1.46
- 100+ adet$1.38
- 500+ adet$1.30
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 109 ns
- Fet Type
- N-Channel
- Vgsth Max Id
- 2.1V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 158 ns
- Power Dissipation
- 293W
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Fabrika Tedarik Süresi
- 12 Weeks
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Current Continuous Drain Id25
- 130A Tc
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 3.4m Ω @ 25A, 10V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 130A
- Max Dual Supply Voltage
- 60V
- Input Capacitance Ciss Max Vds
- 10115pF @ 25V
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 95nC @ 5V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Rise Time
- 100ns
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- 60V
- Turn On Delay Time
- 54.2 ns
- Number Of Elements
- 1
- Vgs Max
- ±20V
- Power Dissipation Max
- 293W Tc
- Kılıf / Paket
- TO-220-3
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