Adet bazlı fiyat
- 1+ adet$1.58
- 10+ adet$1.49
- 100+ adet$1.41
- 500+ adet$1.33
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Dissipation
- 306W
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 77 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 22 ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 800 mJ
- Drain To Source Breakdown Voltage
- 60V
- Turn On Delay Time
- 31 ns
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 306W Tc
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 130nC @ 10V
- Pin Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 2
- Parça Durumu
- Active
- Rise Time
- 26ns
- Montaj Tipi
- Surface Mount
- Rds On Max Id Vgs
- 3.2m Ω @ 25A, 10V
- Yayın Yılı
- 2012
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 824A
- Input Capacitance Ciss Max Vds
- 8079pF @ 30V
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 100A Tc
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