Adet bazlı fiyat
- 1+ adet$2.04
- 10+ adet$1.93
- 100+ adet$1.82
- 500+ adet$1.72
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 21 ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 4
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 75 mJ
- Jedec95 Code
- MO-235
- Power Dissipation
- 81W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Vgsth Max Id
- 2.15V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 50 ns
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rds On Max Id Vgs
- 3m Ω @ 15A, 10V
- Yayın Yılı
- 2011
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 30
- Max Dual Supply Voltage
- 30V
- Input Capacitance Ciss Max Vds
- 2822pF @ 12V
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- YES
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 34 ns
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Power Dissipation Max
- 81W Tc
- Kılıf / Paket
- SC-100, SOT-669
- Pin Sayısı
- 4
- Gate Charge Qg Max Vgs
- 45.8nC @ 10V
- Terminal Formu
- GULL WING
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