PSMN3R0-30MLC,115

Teknik Özellikler

Drain To Source Voltage Vdss

30V

Avalanche Energy Rating Eas

64 mJ

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.00405Ohm

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

70A

Ds Breakdown Voltagemin

30V

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Vgsth Max Id

2.15V @ 1mA

Reference Standard

IEC-60134

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

70A Tc

Jesd30 Code

R-PSSO-G4

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fabrika Tedarik Süresi

26 Weeks

Input Capacitance Ciss Max Vds

2330pF @ 15V

Pulsed Drain Currentmax Idm

498A

Rds On Max Id Vgs

3.15m Ω @ 25A, 10V

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Terminal Sayısı

4

Parça Durumu

Active

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

8

Gate Charge Qg Max Vgs

34.8nC @ 10V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Power Dissipation Max

88W Tc

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Kılıf / Paket

SOT-1210, 8-LFPAK33