PSMN2R8-80BS,118

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

139nC @ 10V

Pin Sayısı

3

Montaj Tipi

Surface Mount

Rise Time

43ns

Parça Durumu

Active

Terminal Sayısı

2

Turn On Delay Time

41 ns

Drain To Source Breakdown Voltage

80V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation Max

306W Tc

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Vgs Max

±20V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

120A Tc

Transistor Application

SWITCHING

Continuous Drain Current Id

120A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2012

Rds On Max Id Vgs

3m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

9961pF @ 40V

Pulsed Drain Currentmax Idm

824A

Max Dual Supply Voltage

80V

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

109 ns

Power Dissipation

306W

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

676 mJ

Gate To Source Voltage Vgs

20V

Pin Sayısı

3