Adet bazlı fiyat
- 1+ adet$3.21
- 10+ adet$3.03
- 100+ adet$2.85
- 500+ adet$2.69
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Gate Charge Qg Max Vgs
- 71nC @ 10V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Rise Time
- 29ns
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Turn On Delay Time
- 28 ns
- Drain To Source Breakdown Voltage
- 40V
- Kılıf / Paket
- TO-220-3
- Power Dissipation Max
- 211W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Current Continuous Drain Id25
- 100A Tc
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 100A
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 2.8m Ω @ 10A, 10V
- Input Capacitance Ciss Max Vds
- 4491pF @ 20V
- Pulsed Drain Currentmax Idm
- 797A
- Max Dual Supply Voltage
- 40V
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Turn Off Delay Time
- 52 ns
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 211W
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Avalanche Energy Rating Eas
- 407 mJ
- Gate To Source Voltage Vgs
- 20V
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