Adet bazlı fiyat
- 1+ adet$6.65
- 10+ adet$6.27
- 100+ adet$5.92
- 500+ adet$5.58
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Turn Off Delay Time
- 87 ns
- Operating Mode
- ENHANCEMENT MODE
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 326W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Avalanche Energy Rating Eas
- 411 mJ
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 58 ns
- Drainsource On Resistancemax
- 0.0026Ohm
- Gate Charge Qg Max Vgs
- 140nC @ 10V
- Pin Sayısı
- 3
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Rise Time
- 50ns
- Drain To Source Breakdown Voltage
- 60V
- Kılıf / Paket
- TO-220-3
- Power Dissipation Max
- 326W Tc
- Number Of Elements
- 1
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 150A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 150A
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 2.6m Ω @ 25A, 10V
- Yayın Yılı
- 2013
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 961A
- Input Capacitance Ciss Max Vds
- 7629pF @ 25V
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