PSMN2R2-40BS,118

Teknik Özellikler

Fall Time Typ

25.2 ns

Drainsource On Resistancemax

0.0022Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Avalanche Energy Rating Eas

1.24 mJ

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Power Dissipation

306W

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

66.6 ns

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Max Dual Supply Voltage

40V

Pulsed Drain Currentmax Idm

962A

Input Capacitance Ciss Max Vds

8423pF @ 20V

Yayın Yılı

2012

Rds On Max Id Vgs

2.2m Ω @ 25A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

100A Tc

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation Max

306W Tc

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Vgs Max

±20V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

40V

Turn On Delay Time

33.2 ns

Montaj Tipi

Surface Mount

Rise Time

40.4ns

Parça Durumu

Active