PSMN2R2-25YLC,115

Teknik Özellikler

Turn On Delay Time

24 ns

Drain To Source Breakdown Voltage

25V

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

106W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

39nC @ 10V

Pin Sayısı

4

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

4

Parça Durumu

Active

Kurşunsuz

Lead Free

Rise Time

34ns

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

100A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

2.4m Ω @ 25A, 10V

Yayın Yılı

2011

Input Capacitance Ciss Max Vds

2542pF @ 12V

Pulsed Drain Currentmax Idm

636A

Max Dual Supply Voltage

25V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Current Continuous Drain Id25

100A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Jedec95 Code

MO-235

Power Dissipation

106W

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Vgsth Max Id

1.95V @ 1mA

Direnç

3.15MOhm

Fet Type

N-Channel

Turn Off Delay Time

36 ns

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant