Adet bazlı fiyat
- 1+ adet$5.20
- 10+ adet$4.90
- 100+ adet$4.63
- 500+ adet$4.36
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Pozisyonu
- SINGLE
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 338W
- Turn Off Delay Time
- 111 ns
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Fall Time Typ
- 53 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tube
- Kılıf / Paket
- TO-220-3
- Power Dissipation Max
- 338W Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Turn On Delay Time
- 45.2 ns
- Drain To Source Breakdown Voltage
- 40V
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Rise Time
- 66ns
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 136nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Input Capacitance Ciss Max Vds
- 9710pF @ 20V
- Max Dual Supply Voltage
- 40V
- Continuous Drain Current Id
- 120A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 1.6m Ω @ 25A, 10V
- Yayın Yılı
- 2013
- Drive Voltage Max Rds On Min Rds On
- 10V
- Current Continuous Drain Id25
- 120A Tc
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