Adet bazlı fiyat
- 1+ adet$2.09
- 10+ adet$1.97
- 100+ adet$1.86
- 500+ adet$1.75
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 76 ns
- Vgsth Max Id
- 2.15V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Power Dissipation
- 109W
- Jedec95 Code
- MO-235
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Fall Time Typ
- 34 ns
- Drainsource On Resistancemax
- 0.0019Ohm
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 72ns
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 4
- Parça Durumu
- Active
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 4
- Gate Charge Qg Max Vgs
- 77.9nC @ 10V
- Terminal Formu
- GULL WING
- Kılıf / Paket
- SC-100, SOT-669
- Power Dissipation Max
- 109W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Turn On Delay Time
- 46 ns
- Drain To Source Breakdown Voltage
- 30V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Current Continuous Drain Id25
- 100A Tc
- Yüzey Montaj
- YES
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 5057pF @ 12V
- Pulsed Drain Currentmax Idm
- 790A
- Max Dual Supply Voltage
- 30V
- Transistor Application
- SWITCHING
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