PSMN1R4-30YLDX

Teknik Özellikler

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

20.6 ns

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

653 mJ

Additional Feature

HIGH RELIABILITY

Pin Sayısı

4

Gate To Source Voltage Vgs

20V

Jedec95 Code

MO-235

Transistor Element Material

SILICON

Vgsth Max Id

2.2V @ 1mA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

31.5 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

100A

Transistor Application

SWITCHING

Rds On Max Id Vgs

1.42m Ω @ 25A, 10V

Yayın Yılı

2014

Max Dual Supply Voltage

30V

Input Capacitance Ciss Max Vds

3840pF @ 15V

Fabrika Tedarik Süresi

12 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

100A Tc

Turn On Delay Time

23 ns

Drain To Source Breakdown Voltage

30V

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

166W Tc

Number Of Elements

1

Vgs Max

±20V

Element Configuration

Single

Pin Sayısı

4

Gate Charge Qg Max Vgs

54.8nC @ 10V

Terminal Formu

GULL WING

Parça Durumu

Active

Terminal Sayısı

4