PSMN1R2-25YLC,115

Teknik Özellikler

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

4

Turn On Delay Time

32 ns

Current Continuous Drain Id25

100A Tc

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Rds On Max Id Vgs

1.3m Ω @ 25A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Pin Sayısı

4

Max Input Voltage

20V

Quiescent Current

6mA

Fall Time Typ

29 ns

Polarity

Positive

Radyasyon Dayanımı

No

Terminal Sayısı

4

Kurşunsuz

Lead Free

Rise Time

42ns

Montaj Tipi

Surface Mount

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

66nC @ 10V

Accuracy

1 %

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Vgs Max

±20V

Number Of Elements

1

Power Dissipation Max

179W Tc

Kılıf / Paket

SC-100, SOT-669

Drain To Source Breakdown Voltage

25V

Yüzey Montaj

YES

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Output Voltage

2.5V

Max Dual Supply Voltage

25V

Input Capacitance Ciss Max Vds

4173pF @ 12V

Yayın Yılı

2011