Adet bazlı fiyat
- 1+ adet$5.91
- 10+ adet$5.58
- 100+ adet$5.26
- 500+ adet$4.97
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 199 ns
- Vgsth Max Id
- 2.2V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Power Dissipation
- 338W
- Jedec95 Code
- TO-220AB
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Ambalaj
- Tube
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 115 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 213ns
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 243nC @ 10V
- Kılıf / Paket
- TO-220-3
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Power Dissipation Max
- 338W Tc
- Turn On Delay Time
- 95 ns
- Drain To Source Breakdown Voltage
- 30V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Current Continuous Drain Id25
- 120A Tc
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Dual Supply Voltage
- 30V
- Input Capacitance Ciss Max Vds
- 14850pF @ 15V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 120A
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