Adet bazlı fiyat
- 1+ adet$0.64
- 10+ adet$0.61
- 100+ adet$0.57
- 500+ adet$0.54
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgsth Max Id
- 2.2V @ 1mA
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 199 ns
- Power Dissipation
- 338W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Avalanche Energy Rating Eas
- 1900 mJ
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0014Ohm
- Fall Time Typ
- 115 ns
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 243nC @ 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Rise Time
- 213ns
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Kurşunsuz
- Lead Free
- Turn On Delay Time
- 95 ns
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation Max
- 338W Tc
- Number Of Elements
- 1
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 12 Weeks
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Current Continuous Drain Id25
- 120A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 120A
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