PSMN070-200P,127

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.07Ohm

Fall Time Typ

90 ns

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Avalanche Energy Rating Eas

462 mJ

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Ambalaj

Tube

Transistor Element Material

SILICON

Power Dissipation

250W

Jedec95 Code

TO-220AB

Turn Off Delay Time

80 ns

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

4570pF @ 25V

Pulsed Drain Currentmax Idm

140A

Max Dual Supply Voltage

200V

Transistor Application

SWITCHING

Continuous Drain Current Id

35A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2002

Rds On Max Id Vgs

70m Ω @ 17A, 10V

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

35A Tc

Yüzey Montaj

NO

Case Connection

DRAIN

Fabrika Tedarik Süresi

20 Weeks

Kılıf / Paket

TO-220-3

Vgs Max

±20V

JESD-609 Kodu

e3

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

250W Tc

Turn On Delay Time

22 ns

Drain To Source Breakdown Voltage

200V

Montaj Tipi

Through Hole

Rise Time

100ns

Kurşunsuz

Lead Free