PSMN070-200B,118

Teknik Özellikler

Vgs Max

±20V

JESD-609 Kodu

e3

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

250W Tc

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

200V

Turn On Delay Time

22 ns

Seri

TrenchMOS™

Montaj Tipi

Surface Mount

Rise Time

100ns

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Terminal Sayısı

2

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Pin Sayısı

3

Gate Charge Qg Max Vgs

77nC @ 10V

Terminal Formu

GULL WING

Max Dual Supply Voltage

200V

Input Capacitance Ciss Max Vds

4570pF @ 25V

Yayın Yılı

2010

Rds On Max Id Vgs

70m Ω @ 17A, 10V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

35A

Yüzey Montaj

YES

Case Connection

DRAIN

Current Continuous Drain Id25

35A Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Transistor Element Material

SILICON

Power Dissipation

250W

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

80 ns

Fet Type

N-Channel

Direnç

70MOhm

Vgsth Max Id

4V @ 1mA

Çalışma Sıcaklığı

-55°C~175°C TJ