PSMN050-80BS,118

Teknik Özellikler

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

16 ns

Power Dissipation

56W

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

18 mJ

Gate To Source Voltage Vgs

5.2V

Pin Sayısı

3

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.046Ohm

Fall Time Typ

2.4 ns

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Pin Sayısı

3

Gate Charge Qg Max Vgs

11nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Rise Time

1ns

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Parça Durumu

Obsolete

Turn On Delay Time

9.2 ns

Drain To Source Breakdown Voltage

73V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

56W Tc

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

22A Tc

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)