Adet bazlı fiyat
- 1+ adet$0.47
- 10+ adet$0.44
- 100+ adet$0.42
- 500+ adet$0.39
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 16 ns
- Power Dissipation
- 56W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tape & Reel (TR)
- Avalanche Energy Rating Eas
- 18 mJ
- Gate To Source Voltage Vgs
- 5.2V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.046Ohm
- Fall Time Typ
- 2.4 ns
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 11nC @ 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Rise Time
- 1ns
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Parça Durumu
- Obsolete
- Turn On Delay Time
- 9.2 ns
- Drain To Source Breakdown Voltage
- 73V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Power Dissipation Max
- 56W Tc
- Fabrika Tedarik Süresi
- 16 Weeks
- Drive Voltage Max Rds On Min Rds On
- 10V
- Jesd30 Code
- R-PSSO-G2
- Case Connection
- DRAIN
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 22A Tc
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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