PSMN040-100MSEX

Teknik Özellikler

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

54 mJ

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0366Ohm

Fall Time Typ

13 ns

Vgsth Max Id

4V @ 1mA

Contact Plating

Tin

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

18.7 ns

Power Dissipation

91W

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

26 Weeks

Jesd30 Code

R-PSSO-G4

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

30A Tj

Yüzey Montaj

YES

Case Connection

DRAIN

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

30A

Yayın Yılı

2013

Rds On Max Id Vgs

36.6m Ω @ 10A, 10V

Tepe Reflow Süresi (maks. sn)

30

Max Dual Supply Voltage

100V

Input Capacitance Ciss Max Vds

1470pF @ 50V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

30nC @ 10V

Pin Sayısı

8

Rise Time

14.1ns

Montaj Tipi

Surface Mount

Terminal Sayısı

4

Parça Durumu

Active

Turn On Delay Time

8.3 ns