Adet bazlı fiyat
- 1+ adet$2.14
- 10+ adet$2.02
- 100+ adet$1.91
- 500+ adet$1.80
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fall Time Typ
- 9 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 42 mJ
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Power Dissipation
- 86W
- Turn Off Delay Time
- 28 ns
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Max Dual Supply Voltage
- 100V
- Input Capacitance Ciss Max Vds
- 1201pF @ 50V
- Rds On Max Id Vgs
- 34.5m Ω @ 15A, 10V
- Yayın Yılı
- 2010
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 32A
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 32A Tc
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Dissipation Max
- 86W Tc
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-220-3
- Drain To Source Breakdown Voltage
- 100V
- Turn On Delay Time
- 12 ns
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Rise Time
- 10ns
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