Adet bazlı fiyat
- 1+ adet$2.36
- 10+ adet$2.22
- 100+ adet$2.10
- 500+ adet$1.98
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 28 ns
- Power Dissipation
- 86W
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tape & Reel (TR)
- Avalanche Energy Rating Eas
- 42 mJ
- Gate To Source Voltage Vgs
- 4.4V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 9 ns
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 23.8nC @ 10V
- Terminal Formu
- GULL WING
- Rise Time
- 10ns
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Sayısı
- 2
- Parça Durumu
- Active
- Turn On Delay Time
- 12 ns
- Drain To Source Breakdown Voltage
- 90V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation Max
- 86W Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 12 Weeks
- Jesd30 Code
- R-PSSO-G2
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 32A Tc
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 32A
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