PSMN028-100YS,115

Teknik Özellikler

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Power Dissipation

89W

Jedec95 Code

MO-235

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

33 ns

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Fall Time Typ

12 ns

Drainsource On Resistancemax

0.0275Ohm

Çalışma Sıcaklığı

-55°C~175°C TJ

Drain Currentmax Abs Id

30A

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

68 mJ

Gate To Source Voltage Vgs

20V

Pin Sayısı

4

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

89W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Turn On Delay Time

15 ns

Drain To Source Breakdown Voltage

100V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

14ns

Parça Durumu

Active

Terminal Sayısı

4

Terminal Kaplaması

Tin (Sn)

Terminal Formu

THROUGH-HOLE

Gate Charge Qg Max Vgs

33nC @ 10V

Pin Sayısı

4

Input Capacitance Ciss Max Vds

1634pF @ 50V

Max Dual Supply Voltage

100V

Transistor Application

SWITCHING

Continuous Drain Current Id

42A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010