Adet bazlı fiyat
- 1+ adet$3.02
- 10+ adet$2.85
- 100+ adet$2.69
- 500+ adet$2.54
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drain To Source Breakdown Voltage
- 100V
- Turn On Delay Time
- 14.4 ns
- Number Of Elements
- 1
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Power Dissipation Max
- 103W Tc
- Kılıf / Paket
- TO-220-3
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Montaj Tipi
- Through Hole
- Rise Time
- 11.4ns
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Yayın Yılı
- 2011
- Rds On Max Id Vgs
- 26.8m Ω @ 15A, 10V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 37A
- Max Dual Supply Voltage
- 100V
- Input Capacitance Ciss Max Vds
- 1624pF @ 50V
- Fabrika Tedarik Süresi
- 12 Weeks
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Current Continuous Drain Id25
- 37A Tc
- Drive Voltage Max Rds On Min Rds On
- 10V
- Power Dissipation
- 103W
- Jedec95 Code
- TO-220AB
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 29.6 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0268Ohm
- Fall Time Typ
- 8.9 ns
- Ambalaj
- Tube
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