Adet bazlı fiyat
- 1+ adet$2.83
- 10+ adet$2.67
- 100+ adet$2.52
- 500+ adet$2.38
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 26nC @ 10V
- Terminal Kaplaması
- Tin (Sn)
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation Max
- 103W Tc
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-220-3
- Fabrika Tedarik Süresi
- 12 Weeks
- Case Connection
- DRAIN
- Yüzey Montaj
- NO
- Current Continuous Drain Id25
- 50A Tc
- Drive Voltage Max Rds On Min Rds On
- 10V
- Jesd30 Code
- R-PSFM-T3
- Rds On Max Id Vgs
- 17m Ω @ 10A, 10V
- Yayın Yılı
- 2014
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 200A
- Input Capacitance Ciss Max Vds
- 1573pF @ 40V
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Jedec95 Code
- TO-220AB
- REACH Uyumluluk Kodu
- not_compliant
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Drain To Source Voltage Vdss
- 80V
- Avalanche Energy Rating Eas
- 55 mJ
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 50A
- Ds Breakdown Voltagemin
- 80V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.017Ohm
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