PSMN015-100B,118

Teknik Özellikler

Ds Breakdown Voltagemin

100V

Drain Currentmax Abs Id

75A

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.015Ohm

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

320 mJ

Additional Feature

AVALANCHE RATED

Drain To Source Voltage Vdss

100V

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Tepe Reflow Sıcaklığı (°C)

245

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2009

Rds On Max Id Vgs

15m Ω @ 25A, 10V

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

240A

Input Capacitance Ciss Max Vds

4900pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

75A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Power Dissipation Max

300W Tc

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Pin Sayısı

3

HTS Kodu

8541.29.00.75

Gate Charge Qg Max Vgs

90nC @ 10V