PSMN013-30YLC,115

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Jesd30 Code

R-PSSO-G4

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

32A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

13.6m Ω @ 10A, 10V

Yayın Yılı

2011

Pulsed Drain Currentmax Idm

130A

Input Capacitance Ciss Max Vds

521pF @ 15V

Pin Sayısı

4

Gate Charge Qg Max Vgs

8.3nC @ 10V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Terminal Sayısı

4

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

SC-100, SOT-669

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

26W Tc

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

7 mJ

Additional Feature

HIGH RELIABILITY

Drain To Source Voltage Vdss

30V

Drain Currentmax Abs Id

32A

Ds Breakdown Voltagemin

30V

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0169Ohm

Vgsth Max Id

1.95V @ 1mA

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

MO-235

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON