Adet bazlı fiyat
- 1+ adet$1.19
- 10+ adet$1.12
- 100+ adet$1.06
- 500+ adet$1.00
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 16.9 ns
- Vgsth Max Id
- 4V @ 1mA
- Contact Plating
- Tin
- Fet Type
- N-Channel
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 9.18 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Avalanche Energy Rating Eas
- 50.6 mJ
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Number Of Channels
- 1
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SOT-1210, 8-LFPAK33
- Vgs Max
- ±20V
- Number Of Elements
- 1
- Power Dissipation Max
- 91W Tc
- Turn On Delay Time
- 6.7 ns
- Drain To Source Breakdown Voltage
- 60V
- Rise Time
- 8.46ns
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Terminal Sayısı
- 4
- Terminal Formu
- GULL WING
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 232A
- Input Capacitance Ciss Max Vds
- 1368pF @ 30V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 61A
- Yayın Yılı
- 2013
- Rds On Max Id Vgs
- 11.3m Ω @ 15A, 10V
- Jesd30 Code
- R-PSSO-G4
- Drive Voltage Max Rds On Min Rds On
- 10V
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