PSMN011-60MLX

Teknik Özellikler

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Power Dissipation

91W

Turn Off Delay Time

27.7 ns

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

2.45V @ 1mA

Contact Plating

Tin

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

15.5 ns

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

SOT-1210, 8-LFPAK33

Power Dissipation Max

91W Tc

Number Of Elements

1

Vgs Max

±20V

Turn On Delay Time

13.3 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

20.2ns

Parça Durumu

Active

Terminal Sayısı

4

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

37.2nC @ 10V

Pin Sayısı

8

Max Dual Supply Voltage

60V

Pulsed Drain Currentmax Idm

242A

Input Capacitance Ciss Max Vds

2191pF @ 30V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

61A

Yayın Yılı

2002

Rds On Max Id Vgs

11.3m Ω @ 15A, 10V

Jesd30 Code

R-PSSO-G4

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Current Continuous Drain Id25

61A Tc

Yüzey Montaj

YES