PSMN005-75B,118

Teknik Özellikler

Rds On Max Id Vgs

5m Ω @ 25A, 10V

Yayın Yılı

2001

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

8250pF @ 25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

400A

Fabrika Tedarik Süresi

12 Weeks

Case Connection

DRAIN

Yüzey Montaj

YES

Current Continuous Drain Id25

75A Tc

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

230W Tc

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

165nC @ 10V

HTS Kodu

8541.29.00.75

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Seri

TrenchMOS™

Terminal Sayısı

2

Parça Durumu

Active

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

75A

Ds Breakdown Voltagemin

75V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.005Ohm

Ambalaj

Tape & Reel (TR)

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

75V

Avalanche Energy Rating Eas

500 mJ

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON