Adet bazlı fiyat
- 1+ adet$0.40
- 10+ adet$0.38
- 100+ adet$0.36
- 500+ adet$0.34
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drive Voltage Max Rds On Min Rds On
- 1.2V 4.5V
- Terminal Sayısı
- 3
- Yayın Yılı
- 2014
- Continuous Drain Current Id
- 2.9A
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 20V
- Jesd30 Code
- R-PDSO-N3
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 608pF @ 10V
- Current Continuous Drain Id25
- 2.9A Ta
- Terminal Formu
- NO LEAD
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Ambalaj
- Tape & Reel (TR)
- Montaj
- Surface Mount
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- Drainsource On Resistancemax
- 0.085Ohm
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Reference Standard
- IEC-60134
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fabrika Tedarik Süresi
- 4 Weeks
- Ds Breakdown Voltagemin
- 20V
- Vgs Max
- ±8V
- Pin Sayısı
- 3
- Fet Type
- P-Channel
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 1V @ 250μA
- Power Dissipation Max
- 317mW Ta 8.33W Tc
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- DUAL
- Rds On Max Id Vgs
- 85m Ω @ 2.9A, 4.5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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