PMXB65ENEZ

Teknik Özellikler

Yayın Yılı

2016

Terminal Sayısı

2

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

3.2A

Case Connection

DRAIN

Jesd30 Code

R-PDSO-N2

Yüzey Montaj

YES

Input Capacitance Ciss Max Vds

295pF @ 15V

Number Of Elements

1

Current Continuous Drain Id25

3.2A Ta

Transistor Element Material

SILICON

Kılıf / Paket

3-XDFN Exposed Pad

Power Dissipation

400mW

Max Dual Supply Voltage

30V

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

11 ns

Ambient Temperature Range High

150°C

Number Of Channels

1

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

11nC @ 10V

Drainsource On Resistancemax

0.067Ohm

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Pin Sayısı

3

Vgs Max

±20V

Drain To Source Breakdown Voltage

30V

Turn On Delay Time

3 ns

Fet Type

N-Channel

Rise Time

12ns

Operating Mode

ENHANCEMENT MODE

Yükseklik

400μm

Parça Durumu

Active

Vgsth Max Id

2.5V @ 250μA

Gate To Source Voltage Vgs

20V

Fall Time Typ

3 ns