Adet bazlı fiyat
- 1+ adet$0.44
- 10+ adet$0.41
- 100+ adet$0.39
- 500+ adet$0.37
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Fabrika Tedarik Süresi
- 4 Weeks
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Rise Time
- 12ns
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Turn On Delay Time
- 3 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fall Time Typ
- 2 ns
- Power Dissipation Max
- 400mW Ta 8.33W Tc
- Gate To Source Voltage Vgs
- 20V
- Vgsth Max Id
- 2V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- DUAL
- Rds On Max Id Vgs
- 55m Ω @ 3.2A, 10V
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 3.2A
- Yayın Yılı
- 2016
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Input Capacitance Ciss Max Vds
- 209pF @ 15V
- Number Of Elements
- 1
- Yüzey Montaj
- YES
- Max Dual Supply Voltage
- 30V
- Power Dissipation
- 1.07W
- Current Continuous Drain Id25
- 3.2A Ta
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Radyasyon Dayanımı
- No
- Drainsource On Resistancemax
- 0.065Ohm
- Gate Charge Qg Max Vgs
- 6.3nC @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Turn Off Delay Time
- 11 ns
- Ambalaj
- Tape & Reel (TR)
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