PMXB56ENZ

Teknik Özellikler

Pin Sayısı

3

Vgs Max

±20V

Fabrika Tedarik Süresi

4 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

12ns

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Turn On Delay Time

3 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

2 ns

Power Dissipation Max

400mW Ta 8.33W Tc

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

55m Ω @ 3.2A, 10V

Case Connection

DRAIN

Transistor Application

SWITCHING

Continuous Drain Current Id

3.2A

Yayın Yılı

2016

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

209pF @ 15V

Number Of Elements

1

Yüzey Montaj

YES

Max Dual Supply Voltage

30V

Power Dissipation

1.07W

Current Continuous Drain Id25

3.2A Ta

Transistor Element Material

SILICON

Kılıf / Paket

3-XDFN Exposed Pad

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.065Ohm

Gate Charge Qg Max Vgs

6.3nC @ 10V

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Turn Off Delay Time

11 ns

Ambalaj

Tape & Reel (TR)