PMV65UNER

Teknik Özellikler

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Montaj Tipi

Surface Mount

Reference Standard

IEC-60134

Ds Breakdown Voltagemin

20V

Vgs Max

±8V

Pin Sayısı

3

Rds On Max Id Vgs

73m Ω @ 2.8A, 4.5V

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

1V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

490mW Ta

Jesd30 Code

R-PDSO-G3

Number Of Elements

1

Input Capacitance Ciss Max Vds

291pF @ 10V

Yüzey Montaj

YES

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Terminal Sayısı

3

Yayın Yılı

2016

Drain To Source Voltage Vdss

20V

Jedec95 Code

TO-236AB

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

6nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.073Ohm

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Current Continuous Drain Id25

2.8A Ta

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drain Currentmax Abs Id

2.8A