PMV50XPR

Teknik Özellikler

Ds Breakdown Voltagemin

20V

Pin Sayısı

3

Vgs Max

±12V

Fabrika Tedarik Süresi

4 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Reference Standard

IEC-60134

Montaj Tipi

Surface Mount

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

P-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

490mW Ta 4.63W Tc

Vgsth Max Id

900mV @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

60m Ω @ 3.6A, 4.5V

Drain To Source Voltage Vdss

20V

Continuous Drain Current Id

3.6A

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Terminal Sayısı

3

Number Of Elements

1

Input Capacitance Ciss Max Vds

744pF @ 20V

Jesd30 Code

R-PDSO-G3

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Current Continuous Drain Id25

3.6A Ta

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

12nC @ 4.5V

Drainsource On Resistancemax

0.06Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Jedec95 Code

TO-236AB

Ambalaj

Cut Tape (CT)