PMV48XP,215

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

55m Ω @ 2.4A, 4.5V

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Fall Time Typ

23 ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation Max

510mW Ta

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Vgsth Max Id

1.25V @ 250μA

Gate To Source Voltage Vgs

12V

Fet Type

P-Channel

Rise Time

13ns

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Drain To Source Breakdown Voltage

-20V

Turn On Delay Time

11 ns

Contact Plating

Tin

Pin Sayısı

3

Vgs Max

±12V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

4 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

11nC @ 4.5V

Drainsource On Resistancemax

0.055Ohm

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

61 ns

Max Dual Supply Voltage

-20V

Current Continuous Drain Id25

3.5A Ta

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Power Dissipation

510mW

Yüzey Montaj

YES

Input Capacitance Ciss Max Vds

1000pF @ 10V

Number Of Elements

1

Drain To Source Voltage Vdss

20V