PMV32UP,215

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

36m Ω @ 2.4A, 4.5V

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

33 ns

Power Dissipation Max

510mW Ta

Gate To Source Voltage Vgs

8V

Vgsth Max Id

950mV @ 250μA

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Rise Time

21ns

Fet Type

P-Channel

Turn On Delay Time

13 ns

Drain To Source Breakdown Voltage

-20V

Pin Sayısı

3

Contact Plating

Tin

Vgs Max

±8V

Fabrika Tedarik Süresi

4 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

15.5nC @ 4.5V

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

95 ns

Max Dual Supply Voltage

-20V

Drain Currentmax Abs Id

4A

Power Dissipation

510mW

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Current Continuous Drain Id25

4A Ta

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1890pF @ 10V

Number Of Elements

1