PMPB29XPE,115

Teknik Özellikler

Fet Type

P-Channel

Gate Charge Qg Max Vgs

45nC @ 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

20V

Parça Durumu

Active

Yayın Yılı

2012

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

6

Input Capacitance Ciss Max Vds

2970pF @ 10V

Fabrika Tedarik Süresi

8 Weeks

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

12 ns

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Drain Currentmax Abs Id

5A

Pin Sayısı

6

Current Continuous Drain Id25

5A Ta

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.038Ohm

Power Dissipation Max

1.7W Ta 12.5W Tc

Max Dual Supply Voltage

-20V

Number Of Channels

1

Vgs Max

±12V

Turn Off Delay Time

91 ns

Terminal Pozisyonu

DUAL

Vgsth Max Id

900mV @ 250μA

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Kılıf / Paket

6-UDFN Exposed Pad

JESD-609 Kodu

e3

Rise Time

53ns

Gate To Source Voltage Vgs

-680mV

Rds On Max Id Vgs

32.5m Ω @ 5A, 4.5V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-20V

Contact Plating

Tin