Adet bazlı fiyat
- 1+ adet$0.54
- 10+ adet$0.51
- 100+ adet$0.48
- 500+ adet$0.45
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fet Type
- P-Channel
- Gate Charge Qg Max Vgs
- 45nC @ 4.5V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 20V
- Parça Durumu
- Active
- Yayın Yılı
- 2012
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 2970pF @ 10V
- Fabrika Tedarik Süresi
- 8 Weeks
- Yüzey Montaj
- YES
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Turn On Delay Time
- 12 ns
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 6
- Drain Currentmax Abs Id
- 5A
- Pin Sayısı
- 6
- Current Continuous Drain Id25
- 5A Ta
- Transistor Application
- SWITCHING
- Drainsource On Resistancemax
- 0.038Ohm
- Power Dissipation Max
- 1.7W Ta 12.5W Tc
- Max Dual Supply Voltage
- -20V
- Number Of Channels
- 1
- Vgs Max
- ±12V
- Turn Off Delay Time
- 91 ns
- Terminal Pozisyonu
- DUAL
- Vgsth Max Id
- 900mV @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Kılıf / Paket
- 6-UDFN Exposed Pad
- JESD-609 Kodu
- e3
- Rise Time
- 53ns
- Gate To Source Voltage Vgs
- -680mV
- Rds On Max Id Vgs
- 32.5m Ω @ 5A, 4.5V
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- -20V
- Contact Plating
- Tin
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