Adet bazlı fiyat
- 1+ adet$0.18
- 10+ adet$0.17
- 100+ adet$0.16
- 500+ adet$0.15
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Current Continuous Drain Id25
- 6.1A Ta
- Drainsource On Resistancemax
- 0.029Ohm
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 1.7W Ta 12.5W Tc
- Max Dual Supply Voltage
- -30V
- Fet Type
- P-Channel
- Gate Charge Qg Max Vgs
- 45nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Power Dissipation
- 1.7W
- Drain To Source Voltage Vdss
- 30V
- Yayın Yılı
- 2012
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 1570pF @ 15V
- Fabrika Tedarik Süresi
- 8 Weeks
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Number Of Elements
- 1
- Turn On Delay Time
- 10 ns
- JESD-609 Kodu
- e3
- Rise Time
- 31ns
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 29m Ω @ 6.1A, 10V
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- -30V
- Contact Plating
- Tin
- Terminal Formu
- NO LEAD
- Fall Time Typ
- 19 ns
- Element Configuration
- Single
- Continuous Drain Current Id
- 6.1A
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- DRAIN
- Number Of Channels
- 1
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