PMPB27EP,115

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Pin Sayısı

6

Current Continuous Drain Id25

6.1A Ta

Drainsource On Resistancemax

0.029Ohm

Transistor Application

SWITCHING

Power Dissipation Max

1.7W Ta 12.5W Tc

Max Dual Supply Voltage

-30V

Fet Type

P-Channel

Gate Charge Qg Max Vgs

45nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

1.7W

Drain To Source Voltage Vdss

30V

Yayın Yılı

2012

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

6

Input Capacitance Ciss Max Vds

1570pF @ 15V

Fabrika Tedarik Süresi

8 Weeks

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1

Turn On Delay Time

10 ns

JESD-609 Kodu

e3

Rise Time

31ns

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

29m Ω @ 6.1A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-30V

Contact Plating

Tin

Terminal Formu

NO LEAD

Fall Time Typ

19 ns

Element Configuration

Single

Continuous Drain Current Id

6.1A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Number Of Channels

1