PMPB20EN,115

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

6-UDFN Exposed Pad

Pulsed Drain Currentmax Idm

30A

Radyasyon Dayanımı

No

Terminal Pozisyonu

DUAL

Vgsth Max Id

2V @ 250μA

Vgs Max

±20V

Turn Off Delay Time

9 ns

Number Of Channels

1

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

7.2A

Contact Plating

Tin

Fall Time Typ

8 ns

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

19.5m Ω @ 7A, 10V

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Rise Time

17ns

Turn On Delay Time

9 ns

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Pin Sayısı

6

Input Capacitance Ciss Max Vds

435pF @ 10V

Fabrika Tedarik Süresi

8 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2014

Transistor Element Material

SILICON

Fet Type

N-Channel

Gate Charge Qg Max Vgs

10.8nC @ 10V

Power Dissipation Max

1.7W Ta 12.5W Tc

Max Dual Supply Voltage

30V

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.0245Ohm

Pin Sayısı

6