PMPB11EN,115

Teknik Özellikler

Rise Time

10ns

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

14.5m Ω @ 9A, 10V

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

30V

Fall Time Typ

9 ns

Element Configuration

Single

Continuous Drain Current Id

9A

Case Connection

DRAIN

Number Of Channels

1

Turn Off Delay Time

17 ns

Vgs Max

±20V

Vgsth Max Id

2V @ 250μA

Terminal Pozisyonu

DUAL

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

6-UDFN Exposed Pad

Pulsed Drain Currentmax Idm

34A

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

9A

Current Continuous Drain Id25

9A Ta

Pin Sayısı

6

Transistor Application

SWITCHING

Max Dual Supply Voltage

30V

Power Dissipation Max

1.7W Ta 12.5W Tc

Gate Charge Qg Max Vgs

20.6nC @ 10V

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Active

Yayın Yılı

2014

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

840pF @ 10V

Fabrika Tedarik Süresi

8 Weeks

Pin Sayısı

6