PMN30UNX

Teknik Özellikler

Terminal Pozisyonu

DUAL

Vgsth Max Id

900mV @ 250μA

Vgs Max

±12V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Kılıf / Paket

SC-74, SOT-457

Rds On Max Id Vgs

40m Ω @ 4.5A, 4.5V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

4.5A

Drain To Source Voltage Vdss

30V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

12nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2016

Parça Durumu

Active

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

635pF @ 15V

Jesd30 Code

R-PDSO-G6

Reference Standard

IEC-60134

Fabrika Tedarik Süresi

4 Weeks

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.04Ohm

Pin Sayısı

6

Current Continuous Drain Id25

4.5A Ta

Power Dissipation Max

530mW Ta 4.46W Tc

Ds Breakdown Voltagemin

30V