Adet bazlı fiyat
- 1+ adet$3.47
- 10+ adet$3.28
- 100+ adet$3.09
- 500+ adet$2.92
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gate To Source Voltage Vgs
- 15V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 75V
- Kılıf / Paket
- TO-220-3
- Ambalaj
- Tube
- Turn Off Delay Time
- 101 ns
- Yüzey Montaj
- NO
- Turn On Delay Time
- 30 ns
- Seri
- TrenchMOS™
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Pin Sayısı
- 3
- Avalanche Energy Rating Eas
- 120 mJ
- HTS Kodu
- 8541.29.00.75
- Fall Time Typ
- 57 ns
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.018Ohm
- Input Capacitance Ciss Max Vds
- 3026pF @ 25V
- Case Connection
- DRAIN
- Rise Time
- 102ns
- Terminal Sayısı
- 3
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 30nC @ 5V
- Rds On Max Id Vgs
- 16m Ω @ 25A, 10V
- Element Configuration
- Single
- Current Continuous Drain Id25
- 73A Tc
- Fet Type
- N-Channel
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 157W
- Vgs Max
- ±15V
- Yayın Yılı
- 2010
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 157W Tc
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- JESD-609 Kodu
- e3
- Max Dual Supply Voltage
- 75V
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