Adet bazlı fiyat
- 1+ adet$2.12
- 10+ adet$2.00
- 100+ adet$1.89
- 500+ adet$1.78
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Rds On Max Id Vgs
- 50m Ω @ 14A, 11V
- Element Configuration
- Single
- Current Continuous Drain Id25
- 27A Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Power Dissipation
- 88W
- Vgs Max
- ±30V
- Yayın Yılı
- 2009
- Montaj Tipi
- Through Hole
- Power Dissipation Max
- 88W Tc
- Parça Durumu
- Active
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Max Dual Supply Voltage
- 75V
- Vgsth Max Id
- 5V @ 2mA
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Pulsed Drain Currentmax Idm
- 108A
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 27A
- Terminal Kaplaması
- Tin (Sn)
- Gate To Source Voltage Vgs
- 30V
- Drive Voltage Max Rds On Min Rds On
- 11V
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Breakdown Voltage
- 75V
- Kılıf / Paket
- TO-220-3
- Ambalaj
- Tube
- Turn Off Delay Time
- 15 ns
- Yüzey Montaj
- NO
- Turn On Delay Time
- 9.5 ns
- Seri
- TrenchMOS™
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 12 Weeks
- Pin Sayısı
- 3
- HTS Kodu
- 8541.29.00.75
- Fall Time Typ
- 9 ns
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.05Ohm
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