PHK5NQ15T,518

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

150V

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Fall Time Typ

18 ns

RoHS Durumu

RoHS Compliant

Pin Sayısı

8

Rise Time

12ns

Terminal Sayısı

8

Genişlik

4mm

Gate Charge Qg Max Vgs

29nC @ 10V

Rds On Max Id Vgs

75m Ω @ 5A, 10V

Nem Hassasiyeti (MSL)

2 (1 Year)

Power Dissipation

6.25W

Vgs Max

±20V

Montaj Tipi

Surface Mount

Power Dissipation Max

6.25W Tc

Transistor Application

SWITCHING

JESD-609 Kodu

e4

Vgsth Max Id

4V @ 1mA

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current Id

5A

Drive Voltage Max Rds On Min Rds On

5V 10V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn Off Delay Time

35 ns

Yüzey Montaj

YES

Seri

TrenchMOS™

Turn On Delay Time

12 ns

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Drainsource On Resistancemax

0.075Ohm

Input Capacitance Ciss Max Vds

1150pF @ 25V

Radyasyon Dayanımı

No

Number Of Elements

1

Current Continuous Drain Id25

5A Tc

Yükseklik

1.45mm