PHB32N06LT,118

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

60V

Kurşunsuz

Lead Free

Case Connection

DRAIN

Turn On Delay Time

14 ns

Tepe Reflow Sıcaklığı (°C)

245

Power Dissipation

97W

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature

LOGIC LEVEL COMPATIBLE

Gate Charge Qg Max Vgs

17nC @ 5V

Pin Sayısı

3

Seri

TrenchMOS™

Power Dissipation Max

97W Tc

Drive Voltage Max Rds On Min Rds On

4.5V 5V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2009

Rise Time

120ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Turn Off Delay Time

45 ns

Transistor Application

SWITCHING

Vgs Max

±15V

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Gerilim

60V

Continuous Drain Current Id

34A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

60V

Element Configuration

Single

Gate To Source Voltage Vgs

15V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Akım

29A

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1280pF @ 25V

Pin Sayısı

3