Adet bazlı fiyat
- 1+ adet$1.51
- 10+ adet$1.42
- 100+ adet$1.34
- 500+ adet$1.27
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Jesd30 Code
- R-PSSO-G2
- Drain To Source Breakdown Voltage
- 75V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Vgs Max
- ±30V
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 15 ns
- Gate To Source Voltage Vgs
- 30V
- HTS Kodu
- 8541.29.00.75
- Transistor Element Material
- SILICON
- Power Dissipation
- 88W
- Max Dual Supply Voltage
- 75V
- Turn On Delay Time
- 9.5 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 27A
- Element Configuration
- Single
- Seri
- TrenchMOS™
- Input Capacitance Ciss Max Vds
- 810pF @ 25V
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Drainsource On Resistancemax
- 0.05Ohm
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pulsed Drain Currentmax Idm
- 108A
- Current Continuous Drain Id25
- 27A Tc
- Number Of Elements
- 1
- Parça Durumu
- Active
- Rise Time
- 70ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2009
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Ambalaj
- Tape & Reel (TR)
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