PHB21N06LT,118

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Fet Type

N-Channel

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

55V

Kurşunsuz

Lead Free

Case Connection

DRAIN

Turn On Delay Time

7 ns

Power Dissipation

56W

Drainsource On Resistancemax

0.075Ohm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature

LOGIC LEVEL COMPATIBLE

Gate Charge Qg Max Vgs

9.4nC @ 5V

Pin Sayısı

3

Seri

TrenchMOS™

Power Dissipation Max

56W Tc

Drive Voltage Max Rds On Min Rds On

5V 10V

Yayın Yılı

1999

Çalışma Sıcaklığı

-55°C~175°C TJ

Pulsed Drain Currentmax Idm

76A

Number Of Elements

1

Rise Time

88ns

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Turn Off Delay Time

25 ns

Vgs Max

±15V

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

19A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Dual Supply Voltage

55V

Element Configuration

Single

HTS Kodu

8541.29.00.75

Gate To Source Voltage Vgs

15V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

650pF @ 25V

Pin Sayısı

3