Adet bazlı fiyat
- 1+ adet$0.43
- 10+ adet$0.41
- 100+ adet$0.38
- 500+ adet$0.36
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Terminal Formu
- GULL WING
- Drain To Source Breakdown Voltage
- 55V
- Kurşunsuz
- Lead Free
- Case Connection
- DRAIN
- Turn On Delay Time
- 7 ns
- Power Dissipation
- 56W
- Drainsource On Resistancemax
- 0.075Ohm
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Gate Charge Qg Max Vgs
- 9.4nC @ 5V
- Pin Sayısı
- 3
- Seri
- TrenchMOS™
- Power Dissipation Max
- 56W Tc
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Yayın Yılı
- 1999
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Pulsed Drain Currentmax Idm
- 76A
- Number Of Elements
- 1
- Rise Time
- 88ns
- Ambalaj
- Tape & Reel (TR)
- Terminal Sayısı
- 2
- Turn Off Delay Time
- 25 ns
- Vgs Max
- ±15V
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PSSO-G2
- RoHS Durumu
- ROHS3 Compliant
- Continuous Drain Current Id
- 19A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Dual Supply Voltage
- 55V
- Element Configuration
- Single
- HTS Kodu
- 8541.29.00.75
- Gate To Source Voltage Vgs
- 15V
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 650pF @ 25V
- Pin Sayısı
- 3
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