Adet bazlı fiyat
- 1+ adet$2.02
- 10+ adet$1.91
- 100+ adet$1.80
- 500+ adet$1.70
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Power Dissipation
- 79W
- Gate To Source Voltage Vgs
- 20V
- HTS Kodu
- 8541.29.00.75
- Element Configuration
- Single
- Turn On Delay Time
- 6 ns
- Max Dual Supply Voltage
- 100V
- Continuous Drain Current Id
- 18A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- DRAIN
- Jesd30 Code
- R-PSSO-G2
- Drain To Source Breakdown Voltage
- 100V
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Turn Off Delay Time
- 18 ns
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Tin (Sn)
- Fet Type
- N-Channel
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Ambalaj
- Tape & Reel (TR)
- Rds On Max Id Vgs
- 90m Ω @ 9A, 10V
- ECCN Kodu
- EAR99
- Pulsed Drain Currentmax Idm
- 72A
- Current Continuous Drain Id25
- 18A Tc
- Number Of Elements
- 1
- Rise Time
- 36ns
- Parça Durumu
- Active
- Yayın Yılı
- 1999
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drive Voltage Max Rds On Min Rds On
- 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Vgsth Max Id
- 4V @ 1mA
- Fall Time Typ
- 12 ns
- Power Dissipation Max
- 79W Tc
- Avalanche Energy Rating Eas
- 70 mJ
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Seri
- TrenchMOS™
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